Datasheet > TTB135N68A

TTB135N68A

更新时间： 2024-11-19 17:01:47

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		栅
页数	文件大小	规格书
9页	696K
描述
Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，Trench MOS拥行更低的导通屯阻和栅漏电荷密度，因而拥行更低的导通和开义损耗及更快的开义速度。同时由

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TTB135N68A 数据手册

TTB135N68A,TTP135N68A

Wuxi Unigroup Microelectronics CO.,LTD.

68V N-Channel Trench MOSFET(Preliminary)



General Description

Product Summary

 Trench Power technology

 Low R_DS(ON)

V_DS

68V

I_D(at V_GS=10V)

135A

 Low Gate Charge

R_DS(ON)(at V_GS=10V)

< 5.0mΩ

 Optimized for fast-switching applications

Applications

100% UIS Tested

 Synchronous Rectification in DC/DC and AC/DC Converters

 Isolated DC/DC Converters in Telecom and Industrial

TO-263

TO-220

Part Number

Package Type

Form

Marking

TTB135N68A

TTP135N68A

TO-263

TO-220

Tape&Reel

Tube

135N68A

Absolute Maximum Ratings (T_A=25ºC unless otherwise noted)

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

105

T_C=25ºC

Continuous Drain Current

I_D

T_C=100ºC

Pulsed Drain Current

I_DM

I_AS

405

Avalanche Current

Single Pulse Avalanche Energy

L =0.3mH

E_AS

290

160

T_C=25ºC

Power Dissipation

P_D

T_C=100ºC

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

ºC

Thermal Characteristics

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Case

Steady-State

R_ƟJC

0.95

ºC /W

Maximum Junction-to-Ambient

R_ƟJA

100

V1.0

www.tsinghuaicwx.com

12 3 4 5 6 7...9

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