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TTB1020B,S4X(S PDF预览

TTB1020B,S4X(S

更新时间: 2024-09-26 21:11:55
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 178K
描述
TTB1020B,S4X(S

TTB1020B,S4X(S 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.74最大集电极电流 (IC):7 A
最小直流电流增益 (hFE):2000元件数量:2
极性/信道类型:PNP最大功率耗散 (Abs):30 W
子类别:BIP General Purpose Small Signal表面贴装:NO
晶体管元件材料:SILICONBase Number Matches:1

TTB1020B,S4X(S 数据手册

 浏览型号TTB1020B,S4X(S的Datasheet PDF文件第2页浏览型号TTB1020B,S4X(S的Datasheet PDF文件第3页浏览型号TTB1020B,S4X(S的Datasheet PDF文件第4页浏览型号TTB1020B,S4X(S的Datasheet PDF文件第5页浏览型号TTB1020B,S4X(S的Datasheet PDF文件第6页 
TTB1020B  
Bipolar Transistors Silicon PNP Triple-Diffused Type  
TTB1020B  
1. Applications  
High-Current Switching  
Hammer Drivers  
2. Features  
(1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A)  
(2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA)  
(3) Complementary to TTD1415B  
3. Packaging and Internal Circuit  
1. Base  
2. Collector  
3. Emitter  
TO-220SIS  
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current (pulsed)  
Base current  
VCBO  
VCEO  
VEBO  
IC  
-100  
-100  
-5  
(Note 1)  
(Note 1)  
-7  
A
ICP  
-10  
-0.7  
2
IB  
Collector power dissipation  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
W
(Tc = 25 )  
PC  
30  
Tj  
150  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Ensure that the junction temperature does not exceed 150 .  
2013-08-06  
Rev.2.0  
1

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