是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.61 | 最大集电极电流 (IC): | 1 A |
配置: | Single | 最小直流电流增益 (hFE): | 120 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 3 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPCP8510 | TOSHIBA |
获取价格 |
Transistor Silicon NPN Epitaxial Type | |
TPCP8511 | TOSHIBA |
获取价格 |
TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power | |
TPCP8511(TE85L,F) | TOSHIBA |
获取价格 |
TPCP8511(TE85L,F) | |
TPCP8512 | TOSHIBA |
获取价格 |
NPN Bipolar Transistor, 50 V, 5 A, PS-8 | |
TPCP8513 | TOSHIBA |
获取价格 |
NPN Bipolar Transistor, 80 V, 4 A, PS-8 | |
TPCP8514 | TOSHIBA |
获取价格 |
NPN Bipolar Transistor, 120 V, 3 A, PS-8 | |
TPCP8516 | TOSHIBA |
获取价格 |
NPN Bipolar Transistor, 50 V, 3 A, PS-8 | |
TPCP8601 | TOSHIBA |
获取价格 |
Silicon PNP Epitaxial Type (PCT Process) | |
TPCP8601(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PNP,20V V(BR)CEO,4A I(C),TSOP | |
TPCP8602 | TOSHIBA |
获取价格 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications |