Datasheet > SUP28N15-52E3

SUP28N15-52E3

更新时间： 2024-11-12 21:04:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	117K
描述
POWER, FET

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SUP28N15-52E3 技术参数

生命周期：	Lifetime Buy	Reach Compliance Code：	unknown
风险等级：	5.25	Base Number Matches：	1

SUP28N15-52E3 数据手册

SUP28N15-52

Vishay Siliconix

N-Channel 150-V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

175 °C Junction Temperature

PWM Optimized

V_DS(V)

R_DS(on)(Ω)

I_D(A)

0.052 at V_GS= 10 V

0.060 at V_GS= 6 V

150

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Primary Side Switch

TO-220AB

DRAIN connected to TAB

G D S

Top View

N-Channel MOSFET

Ordering Information: SUP28N15-52 E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

150

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)^b

I_D

T_C= 125 °C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

I_AR

E_AR

Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)

L = 0.1 mH

T_C= 25 °C

120^b

P_D

Maximum Power Dissipation

T_A= 25 °C

(mounted)^a

3.75^a

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Unit

PCB Mount^a

Free Air

Junction-to-Ambient^a

R_thJA

62.5

1.25

°C/W

R_thJC

Junction-to-Case (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See SOA curve for voltage derating.

Document Number: 71939

S09-1501-Rev. B, 10-Aug-09

www.vishay.com

12 3 4 5 6

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