Datasheet > STPSC20H065C

STPSC20H065C

更新时间： 2024-09-30 14:58:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
9页	164K
描述
650 V、20 A双路高浪涌碳化硅功率肖特基二极管

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STPSC20H065C 数据手册

STPSC20H065C

650 V power Schottky silicon carbide diode

Datasheet - production data

Description

A1 (1)

A2 (3)

K (2)

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

TO-220AB

STPSC20H065CT

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1. Device summary

Symbol

Value

TO-247

STPSC20H065CW

I_F(AV)

V_RRM

2 x 10 A

650 V

T_j(max)

175 °C

Features

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 Dedicated to PFC applications

 High forward surge capability

November 2013

DocID023605 Rev 3

1/9

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...9

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