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STPSC20H12-Y PDF预览

STPSC20H12-Y

更新时间: 2024-10-01 14:58:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 肖特基二极管
页数 文件大小 规格书
14页 462K
描述
汽车用1200 V、20 A高浪涌碳化硅功率肖特基二极管

STPSC20H12-Y 数据手册

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STPSC20H12-Y  
Datasheet  
Automotive 1200 V, 20 A, silicon carbide power Schottky diode  
Features  
A
K
K
K
AEC-Q101 qualified  
No or negligible reverse recovery  
Switching behavior independent of temperature  
Robust high voltage periphery  
K
A
A
NC  
K
D²PAK  
TO-220AC  
PPAP capable  
K
Operating Tj from -40 °C to 175 °C  
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.  
ECOPACK compliant  
A
A
NC  
D²PAK HV  
Applications  
Product label  
On board charger  
Description  
The SiC diode is an ultra high performance power Schottky diode. It is manufactured  
using a silicon carbide substrate. The wide band gap material allows the design of a  
Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no  
recovery is shown at turn-off and ringing patterns are negligible. The minimal  
capacitive turn-off behavior is independent of temperature.  
Especially suited for use in PFC applications, the STPSC20H12-Y will boost  
performance in hard switching conditions. Its high forward surge capability ensures  
good robustness during transient phases.  
Product status link  
STPSC20H12-Y  
Product summary  
I
20 A  
F(AV)  
V
1200 V  
175 °C  
1.35 V  
RRM  
T (max.)  
j
V (typ.)  
F
DS11830 - Rev 4 - May 2019  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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