Datasheet > STPSC4H065DLF-TR

STPSC4H065DLF-TR

更新时间： 2024-09-30 19:45:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
12页	405K
描述
Rectifier Diode

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STPSC4H065DLF-TR 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.69	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

STPSC4H065DLF-TR 数据手册

STPSC4H065DLF

Datasheet

650 V power Schottky silicon carbide diode

Features

•

Less-than-1mm height package

High creepage package

No or negligible reverse recovery

Temperature independent switching behavior

High forward surge capability

Low drop forward voltage

Power efficient product

•

ECOPACK^®2 compliant component

Applications

•

Switch mode power supply

Boost PFC

Bootstrap diode

LLC clamping function

High frequency inverter applications

Description

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Product status link

STPSC4H065DLF

Qualified in low profile package, the STPSC4H065DLF in PowerFLAT™8x8 HV,

enables low drop forward voltage associated to high surge capabilities in low space

environment such as Telecom & Network, Industrial or Renewable energy domains.

Product summary

Symbol

Value

4 A

F(AV)

650 V

1.38 V

175 °C

RRM

F(typ.)

j(max.)

Product label

DS12819 - Rev 1 - November 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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