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STPSC8H065B-TR PDF预览

STPSC8H065B-TR

更新时间: 2024-10-03 17:33:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 肖特基二极管
页数 文件大小 规格书
14页 228K
描述
650 V、8 A高浪涌碳化硅功率肖特基二极管

STPSC8H065B-TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DPAK-3/2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:14 weeks
风险等级:2.22应用:POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.75 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:69 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-40 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:650 V
最大反向电流:80 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

STPSC8H065B-TR 数据手册

 浏览型号STPSC8H065B-TR的Datasheet PDF文件第2页浏览型号STPSC8H065B-TR的Datasheet PDF文件第3页浏览型号STPSC8H065B-TR的Datasheet PDF文件第4页浏览型号STPSC8H065B-TR的Datasheet PDF文件第5页浏览型号STPSC8H065B-TR的Datasheet PDF文件第6页浏览型号STPSC8H065B-TR的Datasheet PDF文件第7页 
STPSC8H065  
650 V power Schottky silicon carbide diode  
Datasheet production data  
Description  
A
K
The SiC diode is an ultrahigh performance power  
Schottky diode. It is manufactured using a silicon  
carbide substrate. The wide band gap material  
allows the design of a Schottky diode structure  
with a 650 V rating. Due to the Schottky  
construction, no recovery is shown at turn-off and  
ringing patterns are negligible. The minimal  
capacitive turn-off behavior is independent of  
temperature.  
K
A
A
K
K
TO-220AC Ins  
TO-220AC  
STPSC8H065D STPSC8H065DI  
K
K
Especially suited for use in PFC applications, this  
ST SiC diode will boost the performance in hard  
switching conditions. Its high forward surge  
capability ensures a good robustness during  
transient phases.  
A
NC  
A
NC  
2
DPAK D PAK  
STPSC8H065B-TR STPSC8H065G-TR  
Table 1. Device summary  
Features  
Symbol  
Value  
No reverse recovery charge in application  
current range  
I
8 A  
F(AV)  
V
650 V  
175 °C  
Switching behavior independent of  
temperature  
RRM  
T (max)  
j
High forward surge capability  
Insulated package TO-220AC Ins:  
– Insulated voltage: 2500 V rms  
– Typical package capacitance: 7 pF  
January 2014  
DocID023603 Rev 4  
1/14  
This is information on a product in full production.  
www.st.com  

STPSC8H065B-TR 替代型号

型号 品牌 替代类型 描述 数据表
STPSC8H065D STMICROELECTRONICS

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650 V power Schottky silicon carbide diode

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