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STPSC8H065G-TR PDF预览

STPSC8H065G-TR

更新时间: 2024-06-20 14:41:26
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 肖特基二极管
页数 文件大小 规格书
14页 228K
描述
650 V、8 A高浪涌碳化硅功率肖特基二极管

STPSC8H065G-TR 技术参数

生命周期:Active包装说明:D2PAK-3/2
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:14 weeks风险等级:2.05
应用:POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.75 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:69 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-40 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
最大重复峰值反向电压:650 V最大反向电流:80 µA
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

STPSC8H065G-TR 数据手册

 浏览型号STPSC8H065G-TR的Datasheet PDF文件第2页浏览型号STPSC8H065G-TR的Datasheet PDF文件第3页浏览型号STPSC8H065G-TR的Datasheet PDF文件第4页浏览型号STPSC8H065G-TR的Datasheet PDF文件第5页浏览型号STPSC8H065G-TR的Datasheet PDF文件第6页浏览型号STPSC8H065G-TR的Datasheet PDF文件第7页 
STPSC8H065  
650 V power Schottky silicon carbide diode  
Datasheet production data  
Description  
A
K
The SiC diode is an ultrahigh performance power  
Schottky diode. It is manufactured using a silicon  
carbide substrate. The wide band gap material  
allows the design of a Schottky diode structure  
with a 650 V rating. Due to the Schottky  
construction, no recovery is shown at turn-off and  
ringing patterns are negligible. The minimal  
capacitive turn-off behavior is independent of  
temperature.  
K
A
A
K
K
TO-220AC Ins  
TO-220AC  
STPSC8H065D STPSC8H065DI  
K
K
Especially suited for use in PFC applications, this  
ST SiC diode will boost the performance in hard  
switching conditions. Its high forward surge  
capability ensures a good robustness during  
transient phases.  
A
NC  
A
NC  
2
DPAK D PAK  
STPSC8H065B-TR STPSC8H065G-TR  
Table 1. Device summary  
Features  
Symbol  
Value  
No reverse recovery charge in application  
current range  
I
8 A  
F(AV)  
V
650 V  
175 °C  
Switching behavior independent of  
temperature  
RRM  
T (max)  
j
High forward surge capability  
Insulated package TO-220AC Ins:  
– Insulated voltage: 2500 V rms  
– Typical package capacitance: 7 pF  
January 2014  
DocID023603 Rev 4  
1/14  
This is information on a product in full production.  
www.st.com  

STPSC8H065G-TR 替代型号

型号 品牌 替代类型 描述 数据表
STPSC8H065D STMICROELECTRONICS

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650 V power Schottky silicon carbide diode

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