Datasheet > STPSC6TH13TI

STPSC6TH13TI

更新时间： 2024-10-03 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
8页	269K
描述
2 x 650V串联、6 A高浪涌碳化硅功率肖特基二极管

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STPSC6TH13TI 数据手册

STPSC6TH13TI

Dual 650 V power Schottky silicon carbide diode in series

Datasheet - production data

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

ꢂ

ꢁ

ꢀ

Especially suited for use in specific bridge-less

topologies, this dual 650 V rectifier will boost the

performance in hard switching conditions. Its high

forward surge capability ensures a good

robustness during transient phases.

ꢂ

Table 1. Device summary (per diode)

ꢁ

ꢀ

Symbol

Value

,QVXODWHGꢃ72ꢄꢁꢁꢅ$%

I_F(AV)

V_RRM

6 A

650 V

175 °C

T_j(max.)

Features

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 Suited for specific bridge-less topologies

 High forward surge capability

 Insulated package:

– Capacitance: 7 pF

– Insulated voltage: 2500 V rms

January 2016

DocID024696 Rev 3

1/8

This is information on a product in full production.

www.st.com

12 3 4 5 6 7 8

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