Datasheet > STPSC806

STPSC806

更新时间： 2024-10-02 06:14:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
7页	91K
描述
600 V power Schottky silicon carbide diode

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STPSC806 数据手册

STPSC806

600 V power Schottky silicon carbide diode

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Particularly suitable in PFC boost diode

function

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide bandgap material

allows the design of a Schottky diode structure

with a 600 V rating. Due to the Schottky

construction no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

TO-220AC

STPSC806D

ST SiC diodes will boost the performance of PFC

operations in hard switching conditions.

Table 1.

Device summary

I_F(AV)

8 A

V_RRM

T_{j (max)}

Q_{C (typ)}

600 V

175 °C

10 nC

September 2009

Doc ID 16286 Rev 1

1/7

www.st.com

12 3 4 5 6 7

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