Datasheet > STPSC4H065

STPSC4H065

更新时间： 2024-01-01 17:31:32

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描述
650 V power Schottky silicon carbide diode

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STPSC4H065 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.69	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

STPSC4H065 数据手册

STPSC4H065

650 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

TO-220AC

STPSC4H065D

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

DPAK

Table 1. Device summary

Symbol

Value

STPSC4H065B-TR

I_F(AV)

V_RRM

4 A

650 V

175 °C

T_j(max)

Features

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 High forward surge capability

November 2013

DocID023598 Rev 3

1/10

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...10

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