Datasheet > STPSC4H065DLF

STPSC4H065DLF

更新时间： 2023-12-20 18:44:30

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
12页	376K
描述
4 A、650 V碳化硅功率肖特基二极管

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STPSC4H065DLF 数据手册

STPSC4H065DLF

Datasheet

650 V power Schottky silicon carbide diode

Features

•

Less than 1 mm height package

High creepage package

No or negligible reverse recovery

Temperature independent switching behavior

High forward surge capability

Low drop forward voltage

Power efficient product

ECOPACK2 compliant component

Applications

•

Switch mode power supply

Boost PFC

Bootstrap diode

LLC clamping function

High frequency inverter applications

Description

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Product status link

STPSC4H065DLF

Qualified in low profile package, the STPSC4H065DLF in PowerFLAT 8x8 HV,

enables low drop forward voltage associated to high surge capabilities in low space

environment such as telecom and network, industrial or renewable energy domains.

Product summary

Symbol

Value

4 A

F(AV)

650 V

1.38 V

175 °C

RRM

F(typ.)

j(max.)

Product label

DS12819 - Rev 2 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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