Datasheet > STPSC31H12C-Y

STPSC31H12C-Y

更新时间： 2023-12-20 18:44:50

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	212K
描述
2x15A 1200V Power Schottky Silicon Carbide Diode Automotive

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STPSC31H12C-Y 数据手册

STPSC31H12C-Y

Datasheet

2 X 15 A, 1200 V power Schottky silicon carbide diode

Features

•

AEC-Q101 qualified

No or negligible reverse recovery

Switching behavior independent of temperature

Robust high-voltage periphery

PPAP capable

TO-247

Operating T_jfrom -40 °C to 175 °C

ECOPACK 2 compliant

Applications

•

OBC (on board battery chargers)

PHEV - EV charging stations

Resonant LLC topology

PFC functions (power factor corrector)

Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky

rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap

material allows the design of a low V_FSchottky diode structure with a 1200 V rating.

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Due to the Schottky construction, no recovery is shown at turn-off and ringing

patterns are negligible. The minimal capacitive turn-off behavior is independent of

temperature.

STPSC31H12C-Y

Product summary

Especially suited for use in PFC and secondary side applications, this ST SiC diode

will boost the performance in hard switching conditions. This rectifier will enhance the

performance of the targeted application. Its high forward surge capability ensures a

good robustness during transient phases.

2 x 15 A

F(AV)

1200 V

175 °C

1.35 V

RRM

T (max.)

V (typ.)

Product label

DS13325 - Rev 2 - February 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...9

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