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STPSC406 PDF预览

STPSC406

更新时间: 2024-01-19 06:41:26
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
8页 105K
描述
600 V power Schottky silicon carbide diode

STPSC406 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AC包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:14 weeks风险等级:2.25
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1012297Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220AC_3Samacsys Released Date:2018-11-12 23:51:45
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.9 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:40 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-40 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STPSC406 数据手册

 浏览型号STPSC406的Datasheet PDF文件第2页浏览型号STPSC406的Datasheet PDF文件第3页浏览型号STPSC406的Datasheet PDF文件第4页浏览型号STPSC406的Datasheet PDF文件第5页浏览型号STPSC406的Datasheet PDF文件第6页浏览型号STPSC406的Datasheet PDF文件第7页 
STPSC406  
600 V power Schottky silicon carbide diode  
Features  
K
No or negligible reverse recovery  
Switching behavior independent of  
temperature  
Dedicated to PFC boost diode  
A
K
Description  
TO-220AC  
STPSC406D  
The SiC diode is an ultrahigh performance power  
Schottky diode. It is manufactured using a silicon  
carbide substrate. The wide bandgap material  
allows the design of a Schottky diode structure  
with a 600 V rating. Due to the Schottky  
construction no recovery is shown at turn-off and  
ringing patterns are negligible. The minimal  
capacitive turn-off behavior is independent of  
temperature.  
K
A
NC  
DPAK  
STPSC406B  
ST SiC diodes will boost the performance of PFC  
operations in hard switching conditions.  
Table 1.  
Device summary  
IF(AV)  
4 A  
VRRM  
Tj (max)  
QC (typ)  
600 V  
175 °C  
3 nC  
September 2009  
Doc ID 16283 Rev 1  
1/8  
www.st.com  
8

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