Datasheet > STPSC40065C-Y

STPSC40065C-Y

更新时间： 2024-10-01 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
9页	436K
描述
汽车用650 V、40 A双路碳化硅功率肖特基二极管

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STPSC40065C-Y 数据手册

STPSC40065C-Y

Automotive 650 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode is a high voltage power Schottky

diode. It is manufactured using a silicon carbide

substrate. The wide band gap material allows the

design of a Schottky diode structure with a 650 V

rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns

are negligible. The minimal capacitive turn-off

behavior is independent of temperature.

Used as a freewheeling or output rectification

diode, this rectifier will enhance the performance

and form factor of the targeted power supply or

inverter.

TO-247

Table 1: Device summary

Symbol

I_F(AV)

Value

2 x 20 A

650 V

Features



No reverse recovery charge in application

current range

V_RRM



Switching behavior independent of

temperature

Dedicated to PFC applications

AEC-Q101 qualified

PPAP capable

ECOPACK®2 compliant component

T_j(max.)

V_F(typ.)

175 °C

1.30 V



May 2016

DocID029263 Rev 2

1/9

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...9

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