Datasheet > STPSC2H12-Y

STPSC2H12-Y

更新时间： 2023-12-20 18:46:08

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	294K
描述
Automotive 1200 V, 2 A High surge Silicon Carbide Diode

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STPSC2H12-Y 数据手册

STPSC2H12-Y

Datasheet

Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features

•

AEC-Q101 qualified

PPAP capable

No or negligible reverse recovery

High forward surge capability

Operating T_jfrom -40 °C to 175 °C

Creepage distance of 3 mm as per IEC 60664-1

ECOPACK2 compliant component

Product label

Applications

•

Bootstrap function of SiC MOS-FETS

Snubber diode

Switching diode

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of

a Schottky diode structure with a 1200 V rating. Due to the Schottky construction,

no recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

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Especially suited for use in boot strap, snubber circuits, or clamping functions of SiC

MOS-FETs, the STPSC2H12-Y diode will help designers getting the best possible

performance of their controlled switches in all conditions. This rectifier will enhance

the performance of the targeted application.

STPSC2H12-Y

Product summary

2 A

F(AV)

Its improved creepage distance ensures the compatibility with industrial and

automotive creepage standards.

1200 V

175 °C

1.35 V

RRM

T (max.)

V (typ.)

DS13118 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...10

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