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STPSC30G12-Y PDF预览

STPSC30G12-Y

更新时间: 2023-12-20 18:45:48
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 488K
描述
Automotive 1200 V, 30 A Silicon Carbide Diode

STPSC30G12-Y 数据手册

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STPSC30G12-Y  
Datasheet  
Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode  
Features  
A
K
K
AEC-Q101 qualified and PPAP capable  
None or negligible reverse recovery  
Switching behavior independent of temperature  
Robust high voltage periphery  
A
Operating Tj from -55 °C to 175 °C  
Avalanche energy rated  
K
DO-247 LL  
ECOPACK2 compliant component  
Applications  
Boost PFC  
HEV/EV OBC (On board battery chargers)  
EV Charging station  
Description  
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance  
power Schottky rectifier. It is manufactured using a silicon carbide substrate. The  
wide band-gap material allows the design of a low VF Schottky diode structure with  
a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during  
turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is  
independent of temperature.  
Product label  
Based on latest technology optimization, this diode has an improved forward  
surge current capability, making it ideal for use in PFC, where this ST SiC diode  
boosts the performance in hard switching conditions while bringing robustness to the  
design. Its high forward surge capability ensures a good robustness during transient  
phases.  
Product status link  
STPSC30G12-Y  
Product summary  
I
30 A  
F(AV)  
V
1200 V  
175 °C  
1.35 V  
RRM  
T (max.)  
j
V (typ.)  
F
DS14118 - Rev 1 - November 2022  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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