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STPSC2H065 PDF预览

STPSC2H065

更新时间: 2023-12-20 18:44:21
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 肖特基二极管
页数 文件大小 规格书
10页 231K
描述
650 V、2 A高浪涌碳化硅功率肖特基二极管

STPSC2H065 数据手册

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STPSC2H065  
Datasheet  
650 V, 2 A high surge silicon carbide power Schottky diode  
Features  
K
A
No reverse recovery charge in application current range  
Switching behavior independent of temperature  
High forward surge capability  
ECOPACK2 compliant component  
Power efficient product  
Applications  
Switch mode power supply  
Product label  
PFC  
"DC/DC" converters  
LLC topologies  
Boost diode  
Description  
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured  
using a silicon carbide substrate. The wide band gap material allows the design of a  
Schottky diode structure with a 650 V rating. Due to the Schottky construction, no  
recovery is shown at turn-off and ringing patterns are negligible. The minimal  
capacitive turn-off behavior is independent of temperature.  
Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost  
performance in hard switching conditions.  
Product status  
STPSC2H065  
Product summary  
Symbol  
Value  
2 A  
I
F(AV)  
V
650 V  
175 °C  
1.38 V  
RRM  
T
j(max.)  
V
F(typ.)  
DS12989 - Rev 1 - April 2019  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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