Datasheet > STPSC2H065-Y

STPSC2H065-Y

更新时间： 2023-12-20 18:44:53

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
10页	236K
描述
汽车用650V、2 A碳化硅功率肖特基二极管

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STPSC2H065-Y 数据手册

STPSC2H065-Y

Datasheet

Automotive 650 V, 2 A high surge silicon carbide power Schottky diode

Features

•

AEC-Q101 qualified

No reverse recovery charge in application current range

Switching behavior independent of temperature

High forward surge capability

PPAP capable

ECOPACK2 compliant component

V_RRMguaranteed from -40 to 175 °C

Power efficient product

Product label

Applications

•

Switch mode power supply

PFC

"DC/DC" converters

LLC topologies

Boost diode

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 650 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Product status

STPSC2H065-Y

Product summary

Especially suited for use in PFC applications, the STPSC2H065-Y SiC diode will

boost performance in hard switching conditions.

Symbol

Value

2 A

F(AV)

650 V

175 °C

1.38 V

RRM

j(max.)

F(typ.)

DS12990 - Rev 1 - April 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...10

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