Datasheet > STPSC2H12

STPSC2H12

更新时间： 2024-10-01 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
10页	462K
描述
1200 V 碳化硅功率肖特基二极管

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STPSC2H12 数据手册

STPSC2H12

1200 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode, available in TO-220AC and DPAK

HV, is an ultrahigh performance power Schottky

rectifier. It is manufactured using a silicon carbide

substrate. The wide band-gap material allows the

design of a low V_FSchottky diode structure with a

1200 V rating. Due to the Schottky construction,

no recovery is shown at turn-off and ringing

patterns are negligible. The minimal capacitive

turn-off behavior is independent of temperature.

DPAK HV 2L

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

TO-220AC

Features



No or negligible reverse recovery

Switching behavior independent of

temperature

Table 1: Device summary



Robust high voltage periphery

Operating T_jfrom -40 °C to 175 °C

Low V_F

Symbol

I_F(AV)

Value

2 A

ECOPACK^®2 compliant

V_RRM

1200 V

175 °C

1.35 V

T_j(max.)

V_F(typ.)

January 2017

DocID030271 Rev 1

1/10

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...10

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