Datasheet > STPSC20H12CWY

STPSC20H12CWY

更新时间： 2023-12-20 18:45:12

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
10页	252K
描述
20 A 1200 V 碳化硅功率肖特基二极管

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STPSC20H12CWY 数据手册

STPSC20H12CWY

Datasheet

20 A 1200 V power Schottky silicon carbide diode

Features

•

AEC-Q101 qualified

No or negligible reverse recovery

Switching behavior independent of temperature

Robust high-voltage periphery

PPAP capable

Operating T_jfrom -40 °C to 175 °C

ECOPACK2 compliant

Applications

•

OBC (On Board Battery chargers)

PHEV - EV charging stations

Resonant LLC topology

PFC functions (Power Factor Corrector)

Description

The SiC diode, available in TO-247, is an ultrahigh performance power Schottky

rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap

material allows the design of a low V_FSchottky diode structure with a 1200 V rating.

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Due to the Schottky construction, no recovery is shown at turn-off and ringing

patterns are negligible. The minimal capacitive turn-off behavior is independent of

temperature.

STPSC20H12CWY

Product summary

Especially suited for use in PFC and secondary side applications, this ST SiC diode

will boost the performance in hard switching conditions. This rectifier will enhance the

performance of the targeted application. Its high forward surge capability ensures a

good robustness during transient phases.

2 x 10 A

F(AV)

1200 V

175 °C

1.35 V

RRM

T (max.)

V (typ.)

Product label

DS12793 - Rev 2 - February 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...10

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