Datasheet > STPSC20H12G-TR

STPSC20H12G-TR

更新时间： 2024-06-20 14:41:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
8页	436K
描述
1200 V、20 A高浪涌碳化硅功率肖特基二极管

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STPSC20H12G-TR 数据手册

STPSC20H12

1200 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode, available in TO-220AC, is an

ultrahigh performance power Schottky rectifier. It

is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of

a low V_FSchottky diode structure with a 1200 V

rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns

are negligible. The minimal capacitive turn-off

behavior is independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

TO-220AC

Features



No or negligible reverse recovery

Switching behavior independent of

temperature

Table 1: Device summary

Symbol

I_F(AV)

Value

20 A



Robust high voltage periphery

V_RRM

1200 V

175 °C

1.35 V

T_j(max.)

V_F(typ.)

May 2016

DocID029343 Rev 2

1/8

www.st.com

This is information on a product in full production.

12 3 4 5 6 7 8

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