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STPSC20H065CWLY PDF预览

STPSC20H065CWLY

更新时间: 2023-12-20 18:45:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 249K
描述
Automotive 650V, 20A High Surge Silicon Carbide Power Schottky Diode

STPSC20H065CWLY 数据手册

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STPSC20H065CWLY  
Datasheet  
Automotive 20 A 650 V power Schottky silicon carbide diode  
Features  
A1  
A2  
K
AEC-Q101 qualified  
PPAP capable  
No or negligible reverse recovery  
Switching behavior independent of temperature  
Dedicated to PFC applications  
High forward surge capability  
ECOPACK2 compliant component  
Applications  
A2  
K
A1  
On board charger (OBC)  
TO-247 LL  
Charging stations  
PFC applications  
UPS  
Inverters  
Telecom power supplies  
Description  
The STPSC20H065CWLY is an ultra-high-performance power Schottky diode. It is  
manufactured using a silicon carbide substrate. The wide band gap material allows  
the design of a Schottky diode structure with a 650 V rating. Due to the Schottky  
construction, no recovery is shown at turn-off and ringing patterns are negligible. The  
minimal capacitive turn-off behavior is independent of temperature and are ideal for  
automotive applications.  
Product status link  
STPSC20H065CWLY  
Product summary  
I
2 x 10 A  
650 V  
F(AV)  
Especially suited for use in PFC applications, UPS, inverters, telecom power supplies  
and battery chargers (either integrated in the vehicle or in a charging station), this  
diode will enhance the performance of the targeted application. Its high forward surge  
capability ensures a good robustness during transient phases.  
V
RRM  
T (max.)  
175 °C  
1.45 V  
j
V (typ.)  
F
Product label  
DS13678 - Rev 1 - April 2021  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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