Datasheet > STPSC20H065C-Y

STPSC20H065C-Y

更新时间： 2023-12-20 18:45:30

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
9页	150K
描述
汽车用650 V、20 A高浪涌碳化硅功率肖特基二极管

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STPSC20H065C-Y 数据手册

STPSC20H065C-Y

Automotive 650 V power Schottky silicon carbide diode

Datasheet - production data

Description

A1 (1)

A2 (3)

K (2)

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature and are ideal for automotive

applications.

TO-220AB

STPSC20H065CTY

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1. Device summary

TO-247

STPSC20H065CWY

Symbol

Value

2 x 10 A

650 V

F(AV)

RRM

Features

T (max)

175 °C

•

No or negligible reverse recovery

Switching behavior independent of

temperature

•

Dedicated to PFC applications

High forward surge capability

AEC-Q101 qualified

ECOPACK 2 compliant component

PPAP capable

September 2014

DocID026619 Rev 2

1/9

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...9

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