Datasheet > STPSC20G12-Y

STPSC20G12-Y

更新时间： 2024-09-30 14:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	487K
描述
Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode

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STPSC20G12-Y 数据手册

STPSC20G12-Y

Datasheet

Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode

Features

•

AEC-Q101 qualified and PPAP capable

None or negligible reverse recovery

Switching behavior independent of temperature

Robust high voltage periphery

Operating T_jfrom -55 °C to 175 °C

Avalanche energy rated

DO-247 LL

ECOPACK2 compliant component

Applications

•

Boost PFC

HEV/EV OBC (On board battery chargers)

EV Charging station

Description

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance

power Schottky rectifier. It is manufactured using a silicon carbide substrate. The

wide band-gap material allows the design of a low V_FSchottky diode structure with

a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during

turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is

independent of temperature.

Product label

Based on latest technology optimization, this diode has an improved forward

surge current capability, making it ideal for use in PFC, where this ST SiC diode

boosts the performance in hard switching conditions while bringing robustness to the

design. Its high forward surge capability ensures a good robustness during transient

phases.

Product status link

STPSC20G12-Y

Product summary

20 A

F(AV)

1200 V

175 °C

1.35 V

RRM

T (max.)

V (typ.)

DS14117 - Rev 1 - November 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...10

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