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STP50N65DM6 PDF预览

STP50N65DM6

更新时间: 2024-11-24 14:58:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
11页 243K
描述
N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package

STP50N65DM6 技术参数

生命周期:ActiveReach Compliance Code:not_compliant
Factory Lead Time:16 weeks风险等级:2.24

STP50N65DM6 数据手册

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STP50N65DM6  
Datasheet  
N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET  
in a TO-220 package  
Features  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
TAB  
STP50N65DM6  
650 V  
91 mΩ  
33 A  
Fast-recovery body diode  
Lower RDS(on) per area vs previous generation  
3
2
1
TO-220  
Low gate charge, input capacitance and resistance  
100% avalanche tested  
Extremely high dv/dt ruggedness  
Zener-protected  
D(2, TAB)  
Applications  
G(1)  
Switching applications  
Description  
S(3)  
AM01476v1_tab  
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-  
recovery diode series. Compared with the previous MDmesh fast generation, DM6  
combines very low recovery charge (Qrr), recovery time (trr) and excellent  
improvement in RDS(on) per area with one of the most effective switching behaviors  
available in the market for the most demanding high-efficiency bridge topologies and  
ZVS phase-shift converters.  
Product status link  
STP50N65DM6  
Product summary  
Order code  
Marking  
STP50N65DM6  
50N65DM6  
TO-220  
Package  
Packing  
Tube  
DS12360 - Rev 4 - July 2020  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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