是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.28 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (Abs) (ID): | 30 A | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.023 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 45 W |
最大脉冲漏极电流 (IDM): | 220 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STP55N06 | STMICROELECTRONICS |
获取价格 |
55A, 60V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
STP55N06FI | STMICROELECTRONICS |
获取价格 |
30A, 60V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
STP55N06L | STMICROELECTRONICS |
获取价格 |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
STP55N06LFI | STMICROELECTRONICS |
获取价格 |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
STP55NE06 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | |
STP55NE06FP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | |
STP55NE06L | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | |
STP55NE06LFP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | |
STP55NF03L | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I | |
STP55NF06 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220 |