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STP55NE06LFP PDF预览

STP55NE06LFP

更新时间: 2024-11-22 22:18:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 59K
描述
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STP55NE06LFP 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.73Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):250 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):28 A
最大漏极电流 (ID):28 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):35 W
最大脉冲漏极电流 (IDM):220 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP55NE06LFP 数据手册

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STP55NE06L  
STP55NE06LFP  
N - CHANNEL ENHANCEMENT MODE  
” SINGLE FEATURE SIZE ” POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP55NE06L  
STP55NE06LFP  
60 V  
60 V  
< 0.022 Ω  
< 0.022 Ω  
55 A  
28 A  
TYPICAL RDS(on) = 0.018 Ω  
EXCEPTIONAL dV/dt CAPABILTY  
100% AVALANCHE TESTED  
LOW GATE CHARGE 100 oC  
HIGH dV/dt CAPABILITY  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
3
2
2
1
1
TO-220  
TO220FP  
DESCRIPTION  
This Power Mosfet is the latest development of  
SGS-THOMSON unique ”Single Feature Size”  
process whereby a single body is implanted on a  
strip layout structure. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP55NE06L  
STP55NE06LFP  
60  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
60  
± 15  
V
55  
39  
28  
20  
A
ID  
A
I
DM()  
220  
130  
0.86  
220  
35  
A
Ptot  
Total Dissipation at Tc = 25 oC  
W
W/oC  
Derating Factor  
0.23  
2000  
VISO  
Insulation Withstand Voltage (DC)  
Peak Diode Recovery voltage slope  
Storage Temperature  
V
dV/dt  
Tstg  
Tj  
7
V/ns  
oC  
oC  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
(1) ISD 55 A,di/dt 300 A/µs, VDD V(BR)DSS, T TJMAX  
j
1/6  
December 1997  

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