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STI22NM60N PDF预览

STI22NM60N

更新时间: 2024-09-18 12:26:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
23页 994K
描述
N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET

STI22NM60N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:8.63Is Samacsys:N
雪崩能效等级(Eas):300 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):16 A
最大漏极电流 (ID):16 A最大漏源导通电阻:0.22 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):64 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STI22NM60N 数据手册

 浏览型号STI22NM60N的Datasheet PDF文件第2页浏览型号STI22NM60N的Datasheet PDF文件第3页浏览型号STI22NM60N的Datasheet PDF文件第4页浏览型号STI22NM60N的Datasheet PDF文件第5页浏览型号STI22NM60N的Datasheet PDF文件第6页浏览型号STI22NM60N的Datasheet PDF文件第7页 
STB22NM60N, STF22NM60N, STI22NM60N  
STP22NM60N, STW22NM60N  
N-channel 600 V, 0.2 , 16 A MDmesh™ II Power MOSFET  
in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max.  
Order codes  
ID  
3
1
3
3
2
STB22NM60N  
STF22NM60N  
STI22NM60N  
STP22NM60N  
STW22NM60N  
650 V  
650 V  
650 V  
650 V  
650 V  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
16 A  
16 A  
16 A  
16 A  
16 A  
1
2
1
D²PAK  
TO-220FP  
I²PAK  
3
3
2
1
100% avalanche tested  
2
1
TO-220  
Low input capacitance and gate charge  
Low gate input resistance  
TO-247  
Application  
Figure 1.  
Internal schematic diagram  
Switching applications  
$ꢅꢆꢇ  
Description  
These devices are made using the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB22NM60N  
STF22NM60N  
STI22NM60N  
STP22NM60N  
STW22NM60N  
Tape and reel  
TO-220FP  
PAK  
22NM60N  
Tube  
TO-220  
TO-247  
January 2011  
Doc ID 15853 Rev 4  
1/23  
www.st.com  
23  

STI22NM60N 替代型号

型号 品牌 替代类型 描述 数据表
STB22NM60N STMICROELECTRONICS

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N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Po

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