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STI24NM65N PDF预览

STI24NM65N

更新时间: 2024-11-23 06:14:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
19页 553K
描述
N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET

STI24NM65N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.82Is Samacsys:N
雪崩能效等级(Eas):500 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (Abs) (ID):19 A
最大漏极电流 (ID):19 A最大漏源导通电阻:0.19 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):160 W
最大脉冲漏极电流 (IDM):76 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STI24NM65N 数据手册

 浏览型号STI24NM65N的Datasheet PDF文件第2页浏览型号STI24NM65N的Datasheet PDF文件第3页浏览型号STI24NM65N的Datasheet PDF文件第4页浏览型号STI24NM65N的Datasheet PDF文件第5页浏览型号STI24NM65N的Datasheet PDF文件第6页浏览型号STI24NM65N的Datasheet PDF文件第7页 
STW24NM65N-STI24NM65N-STF24NM65N  
STB24NM65N - STP24NM65N  
N-channel 650 V - 0.16 - 19 A - TO-220 - TO-220FP - D2PAK  
I2PAK - TO-247 second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@TJmax)  
Type  
RDS(on) max  
ID  
3
2
3
1
2
1
STB24NM65N  
STI24NM65N  
STF24NM65N  
STP24NM65N  
STW24NM65N  
710 V  
710 V  
710 V  
710 V  
710 V  
< 0.19  
< 0.19 Ω  
< 0.19 Ω  
< 0.19 Ω  
< 0.19 Ω  
19 A  
19 A  
19 A(1)  
PAK  
TO-220  
3
1
19 A  
PAK  
19 A  
3
3
2
1. Limited only by maximum temperature allowed  
2
1
1
TO-220FP  
100% avalanche tested  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is designed using the  
second generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB24NM65N  
STI24NM65N  
STF24NM65N  
STP24NM65N  
STW24NM65N  
24NM65N  
24NM65N  
24NM65N  
24NM65N  
24NM65N  
PAK  
PAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
February 2008  
Rev 1  
1/19  
www.st.com  
19  

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