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STI30NM60ND PDF预览

STI30NM60ND

更新时间: 2024-11-23 03:30:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体二极管晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
15页 290K
描述
N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ II Power MOSFET (with fast diode)

STI30NM60ND 技术参数

生命周期:Obsolete零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N雪崩能效等级(Eas):900 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):25 A最大漏极电流 (ID):25 A
最大漏源导通电阻:0.385 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STI30NM60ND 数据手册

 浏览型号STI30NM60ND的Datasheet PDF文件第2页浏览型号STI30NM60ND的Datasheet PDF文件第3页浏览型号STI30NM60ND的Datasheet PDF文件第4页浏览型号STI30NM60ND的Datasheet PDF文件第5页浏览型号STI30NM60ND的Datasheet PDF文件第6页浏览型号STI30NM60ND的Datasheet PDF文件第7页 
STP/F30NM60ND-STW30NM60ND  
STB30NM60ND-STI30NM60ND  
N-channel 600V - 0.11- 25A TO-220/FP/D2PAK/I2PAK/TO-247  
FDmesh™ II Power MOSFET (with fast diode)  
Preliminary Data  
Features  
Type  
VDSS  
RDS(on) Max  
ID  
3
3
STB30NM60ND  
STI30NM60ND  
STF30NM60ND  
STP30NM60ND  
STW30NM60ND  
600V  
600V  
600V  
600V  
600V  
< 0.13Ω  
< 0.13Ω  
< 0.13Ω  
< 0.13Ω  
< 0.13Ω  
25A  
25A  
1
3
2
2
1
1
D2PAK  
TO-220  
25A(1)  
TO-220FP  
25A  
25A  
1. Limited only by maximum temperature allowed  
3
2
1
3
2
The world’s best R  
*in TO-220 amongst  
DS(on)  
1
the fast recovery diode devices  
I2PAK  
TO-247  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Extremely high dv/dt and avalanche  
capabilities  
Application  
Switching applications  
Description  
The FDmesh™ II series belongs to the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company's strip layout  
and associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.It is therefore strongly  
recommended for bridge topologies, in particular  
ZVS phase-shift converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB30NM60ND  
STI30NM60ND  
STF30NM60ND  
STP30NM60ND  
STW30NM60ND  
30NM60ND  
30NM60ND  
30NM60ND  
30NM60ND  
30NM60ND  
PAK  
PAK  
Tape & reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
November 2007  
Rev 1  
1/15  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
15  

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