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STI33N60M2 PDF预览

STI33N60M2

更新时间: 2024-11-24 14:57:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
20页 679K
描述
N沟道600 V、0.108 Ohm典型值、26 A MDmesh M2功率MOSFET,I2PAK封装

STI33N60M2 数据手册

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STF33N60M2, STI33N60M2  
STP33N60M2, STW33N60M2  
Datasheet  
N-channel 600 V, 0.108 Ω typ., 26 A, MDmesh M2 Power MOSFETs  
in TO220FP, I2PAK, TO-220 and TO-247 packages  
TAB  
Features  
V
@ T  
R
max.  
I
D
Order codes  
STF33N60M2  
STI33N60M2  
STP33N60M2  
STW33N60M2  
Package  
TO-220FP  
I²PAK  
DS  
Jmax  
DS(on)  
3
2
3
1
2
1
TO-220FP  
I2PAK  
650 V  
0.125 Ω  
26 A  
TAB  
TO-220  
TO-247  
3
Extremely low gate charge  
2
1
Excellent output capacitance (COSS) profile  
100% avalanche tested  
TO-220  
TO-247  
(
)
D
2, TAB  
Zener-protected  
Applications  
(
)
1
G
Switching applications  
LLC converters, resonant converters  
(
)
AM15572V1  
S
3
Description  
These devices are N-channel Power MOSFETs developed using the MDmesh M2  
technology. Thanks to their strip layout and improved vertical structure, these devices  
exhibit low on-resistance and optimized switching characteristics, rendering them  
suitable for the most demanding high-efficiency converters.  
Product status links  
STF33N60M2  
STI33N60M2  
STP33N60M2  
STW33N60M2  
DS9497 - Rev 3 - June 2019  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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