Datasheet > STI260N6F6

STI260N6F6

更新时间： 2024-11-23 12:25:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	756K
描述
N-channel 60 V, 0.0024 Î©, 120 A STripFETâ¢ VI DeepGATEâ¢ Power MOSFET in TO-220 and IÂ²PAK packages

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数据手册
替代型号

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STI260N6F6 数据手册

STI260N6F6

STP260N6F6

N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™

Power MOSFET in TO-220 and I²PAK packages

Features

Order codes

V_DSS

R_DS(on)max

I_D

TAB

STI260N6F6

STP260N6F6

60 V

< 0.003 Ω

120 A

■ Low gate charge

■ Very low on-resistance

■ High avalanche ruggedness

I²PAK

TO-220

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

These devices are N-channel Power MOSFETs

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFETs exhibits

the lowest R_DS(on)in all packages.

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Table 1.

Device summary

Order codes

Marking

Package

I²PAK

TO-220

Packaging

STI260N6F6

STP260N6F6

260N6F6

Tube

January 2012

Doc ID 17467 Rev 5

1/14

www.st.com

12 3 4 5 6 7...14

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STI260N6F6 替代型号

型号	品牌	替代类型	描述	数据表
STP260N6F6	STMICROELECTRONICS	功能相似	N-channel 60 V, 0.0024 Î©, 120 A STripFETâ¢

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