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STGP20V60DF PDF预览

STGP20V60DF

更新时间: 2024-11-21 14:57:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
23页 2084K
描述
600 V、20 A超高速沟槽栅场截止V系列IGBT

STGP20V60DF 数据手册

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STGB20V60DF, STGP20V60DF,  
STGW20V60DF, STGWT20V60DF  
600 V, 20 A very high speed  
trench gate field-stop IGBT  
Datasheet  
-
production data  
Features  
TAB  
TAB  
Maximum junction temperature: TJ = 175 °C  
Very high speed switching series  
Tail-less switching off  
3
3
2
1
1
Low saturation voltage: VCE(sat) = 1.8 V (typ.)  
TO-220  
D²PAK  
@ IC = 20 A  
TAB  
Tight parameters distribution  
Safe paralleling  
Low thermal resistance  
Very fast soft recovery antiparallel diode  
Lead free package  
3
3
2
2
1
1
TO-247  
TO-3P  
Applications  
Figure 1. Internal schematic diagram  
Photovoltaic inverters  
Uninterruptible power supply  
Welding  
Power factor correction  
Very high frequency converters  
Description  
This device is an IGBT developed using an  
advanced proprietary trench gate and field stop  
structure. The device is part of the "V" series of  
IGBTs, which represent an optimum compromise  
between conduction and switching losses to  
maximize the efficiency of very high frequency  
converters. Furthermore, a positive VCE(sat)  
temperature coefficient and very tight parameter  
distribution result in safer paralleling operation.  
Table 1. Device summary  
Order code  
Marking  
Package  
Packaging  
STGB20V60DF  
STGP20V60DF  
STGW20V60DF  
STGWT20V60DF  
GB20V60DF  
GP20V60DF  
GW20V60DF  
GWT20V60DF  
D²PAK  
TO-220  
TO-247  
TO-3P  
Tape and reel  
Tube  
Tube  
Tube  
June 2013  
DocID024360 Rev 3  
1/23  
This is information on a product in full production.  
www.st.com  
23  
 

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