Datasheet > STGP20V60DF

STGP20V60DF

更新时间： 2023-12-20 18:44:49

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
23页	2084K
描述
600 V、20 A超高速沟槽栅场截止V系列IGBT

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数据手册

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STGP20V60DF 数据手册

STGB20V60DF, STGP20V60DF,

STGW20V60DF, STGWT20V60DF

600 V, 20 A very high speed

trench gate field-stop IGBT

Datasheet

production data

Features

TAB

• Maximum junction temperature: T_J= 175 °C

• Very high speed switching series

• Tail-less switching off

• Low saturation voltage: V_CE(sat)= 1.8 V (typ.)

TO-220

D²PAK

@ I_C= 20 A

TAB

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

• Lead free package

TO-247

TO-3P

Applications

Figure 1. Internal schematic diagram

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. The device is part of the "V" series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V_CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

Table 1. Device summary

Order code

Marking

Package

Packaging

STGB20V60DF

STGP20V60DF

STGW20V60DF

STGWT20V60DF

GB20V60DF

GP20V60DF

GW20V60DF

GWT20V60DF

D²PAK

TO-220

TO-247

TO-3P

Tape and reel

Tube

June 2013

DocID024360 Rev 3

1/23

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...23

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