Datasheet > STGP30M65DF2

STGP30M65DF2

更新时间： 2024-11-25 00:34:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	695K
描述
Low thermal resistance

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中文翻译

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技术参数
数据手册

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STGP30M65DF2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	30 weeks
风险等级：	5.67	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STGP30M65DF2 数据手册

STGP30M65DF2

Trench gate field-stop IGBT, M series 650 V, 30 A

low-loss in a TO-220 package

Datasheet - production data

Features



6 µs of minimum short-circuit withstand time

V_CE(sat)= 1.55 V (typ.) @ I_C= 30 A

Tight parameters distribution

Safer paralleling

Low thermal resistance

TAB

Soft and very fast recovery antiparallel diode

Applications



TO-220

Motor control

UPS

PFC

Figure 1: Internal schematic diagram

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series of

IGBTs, which represent an optimum compromise

in performance to maximize the efficiency of

inverter systems where low-loss and short-circuit

capability are essential. Furthermore, a positive

V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packaging

STGP30M65DF2

G30M65DF2

TO-220

Tube

April 2017

DocID027355 Rev 3

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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