是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | ROHS COMPLIANT, TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
其他特性: | VOLTAGE CLAMPING | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 40 A | 集电极-发射极最大电压: | 380 V |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 门极发射器阈值电压最大值: | 2.3 V |
门极-发射极最大电压: | 12 V | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 176 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 37000 ns | 标称接通时间 (ton): | 7600 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
STGB35N35LZT4 | STMICROELECTRONICS |
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STGP3NB60 | STMICROELECTRONICS |
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N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT |
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STGP3NB60F | STMICROELECTRONICS |
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N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2 |
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STGP3NB60FD | STMICROELECTRONICS |
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N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2 |
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暂无描述 |
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STGP3NB60H | STMICROELECTRONICS |
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N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT |
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N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT |
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N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT |
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STGP3NB60K | STMICROELECTRONICS |
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N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power |
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STGP3NB60KD | STMICROELECTRONICS |
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N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power |
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STGP3NB60KDFP | STMICROELECTRONICS |
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N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK Power |
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