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STGP3NB60 PDF预览

STGP3NB60

更新时间: 2024-11-19 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
8页 90K
描述
N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT

STGP3NB60 数据手册

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STGP3NB60H  
N-CHANNEL 3A - 600V TO-220  
PowerMESH IGBT  
TYPE  
VCES  
VCE(sat)  
IC  
3 A  
STGP3NB60H  
600 V  
< 2.8 V  
HIGH INPUT IMPEDANCE  
(VOLTAGEDRIVEN)  
LOW ON-VOLTAGEDROP (Vcesat  
LOW GATE CHARGE  
HIGH CURRENT CAPABILITY  
VERY HIGH FREQUENCY OPERATION  
OFF LOSSES INCLUDE TAIL CURRENT  
)
3
2
1
DESCRIPTION  
Using the latest high voltage technology based  
on a patented strip layout, STMicroelectronics  
has designed an advanced family of IGBTs, the  
TO-220  
PowerMESH  
IGBTs,  
with  
outstanding  
perfomances. The suffix ”H” identifies a family  
optimized to achieve very low switching times for  
high frequency applications (<120kHz).  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH FREQUENCY MOTOR CONTROLS  
SMPS AND PFC IN BOTH HARD SWITCH  
AND RESONANT TOPOLOGIES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VECR  
VGE  
Parameter  
Value  
600  
Unit  
Collector-Emitter Voltage (VGS = 0)  
Emitter-Collector Voltage  
Gate-Emitter Voltage  
V
V
20  
20  
V
±
o
IC  
Collector Current (continuous) at Tc = 25 C  
6
A
o
IC  
Collector Current (continuous) at Tc = 100 C  
3
A
I
CM()  
Collector Current (pulsed)  
24  
70  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
Derating Factor  
0.56  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by max. junction temperature  
1/8  
June 1999  

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暂无描述
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