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STGP7NB60HDFP PDF预览

STGP7NB60HDFP

更新时间: 2024-09-26 22:07:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
9页 106K
描述
N-CHANNEL 7A - 600V TO-220/FP PowerMESH IGBT

STGP7NB60HDFP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.81
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):13 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):35 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):220 ns
标称接通时间 (ton):63 nsBase Number Matches:1

STGP7NB60HDFP 数据手册

 浏览型号STGP7NB60HDFP的Datasheet PDF文件第2页浏览型号STGP7NB60HDFP的Datasheet PDF文件第3页浏览型号STGP7NB60HDFP的Datasheet PDF文件第4页浏览型号STGP7NB60HDFP的Datasheet PDF文件第5页浏览型号STGP7NB60HDFP的Datasheet PDF文件第6页浏览型号STGP7NB60HDFP的Datasheet PDF文件第7页 
STGP7NB60HD  
STGP7NB60HDFP  
N-CHANNEL 7A - 600V TO-220/FP  
PowerMESH IGBT  
TYPE  
VCES  
VCE(sat)  
IC  
STGP7NB60HD  
STGP7NB60HDFP  
600 V  
600 V  
< 2.8 V  
< 2.8 V  
7 A  
7 A  
HIGH INPUT IMPEDANCE  
(VOLTAGEDRIVEN)  
LOW ON-VOLTAGEDROP (Vcesat  
LOW GATE CHARGE  
HIGH CURRENT CAPABILITY  
VERY HIGH FREQUENCY OPERATION  
OFF LOSSES INCLUDE TAIL CURRENT  
CO-PACKAGED WITH TURBOSWITCH  
ANTIPARALLEL DIODE  
)
3
3
2
2
1
1
TO-220  
TO-220FP  
DESCRIPTION  
Using the latest high voltage technology based  
on a patented strip layout, STMicroelectronics  
has designed an advanced family of IGBTs, the  
PowerMESH  
IGBTs,  
with  
outstanding  
INTERNAL SCHEMATIC DIAGRAM  
perfomances. The suffix ”H” identifies a family  
optimized to achieve very low switching times for  
high frequency applications (<120kHz).  
APPLICATIONS  
HIGH FREQUENCY MOTOR CONTROLS  
SMPS AND PFC IN BOTH HARD SWITCH  
AND RESONANT TOPOLOGIES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STGP7NB60HD  
STGP7NB60HDFP  
VCES  
VGE  
IC  
Collector-Emitter Voltage (VGS = 0)  
Gate-Emitter Voltage  
600  
± 20  
14  
600  
± 20  
13  
V
V
o
Collector Current (continuous) at Tc = 25 C  
A
o
IC  
Collector Current (continuous) at Tc = 100 C  
7
6
A
ICM()  
Ptot  
Collector Current (pulsed)  
56  
56  
A
o
Total Dissipation at Tc = 25 C  
80  
35  
W
Derating Factor  
0.64  
0.28  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
( ) Pulse width limited by safe operating area  
1/9  
June 1999  

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25A, 600V, N-CHANNEL IGBT, TO-220AB, TO-220, 3 PIN