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STGP3NB60MD PDF预览

STGP3NB60MD

更新时间: 2024-11-23 23:35:03
品牌 Logo 应用领域
其他 - ETC 双极性晶体管
页数 文件大小 规格书
11页 516K
描述
N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT

STGP3NB60MD 数据手册

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STGP3NB60MD - STGB3NB60MD  
N-CHANNEL 3A - 600V TO-220 / D2PAK  
PowerMESH™ IGBT  
TYPE  
V
CES  
V
I
C
CE(sat) (Max)  
@25°C  
@100°C  
STGP3NB60MD  
STGB3NB60MD  
600 V  
600 V  
< 1.9 V  
< 1.9V  
3 A  
3 A  
HIGH INPUT IMPEDANCE  
LOW ON-VOLTAGE DROP (V  
3
3
)
2
cesat  
1
1
2
OFF LOSSES INCLUDE TAIL CURRENT  
LOW GATE CHARGE  
HIGH CURRENT CAPABILITY  
HIGH FREQUENCY OPERATION  
CO-PACKAGED WITH TURBOSWITCH™  
ANTIPARALLEL DIODE  
TO-220  
D PAK  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
Using the latest high voltage technology based on a  
patented strip layout, STMicroelectronics has de-  
signed an advanced family of IGBTs, the Power-  
MESH™ IGBTs, with outstanding perfomances.  
The suffix "M" identifies a family optimized to  
achieve very low switching switching times for high  
frequency applications (<20KHZ)  
APPLICATIONS  
MOTOR CONTROLS  
SMPS AND PFC AND BOTH HARD SWITCH  
AND RESONANT TOPOLOGIES  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
GP3NB60MD  
GB3NB60MD  
PACKAGE  
PACKAGING  
TUBE  
STGP3NB60MD  
TO-220  
2
STGB3NB60MDT4  
TAPE & REEL  
D PAK  
June 2003  
1/11  

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