Datasheet > STGP5H60DF

STGP5H60DF

更新时间： 2024-11-21 14:57:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
31页	888K
描述
600 V、5 A高速沟槽栅场截止H系列IGBT

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中文翻译

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数据手册

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STGP5H60DF 数据手册

STGB5H60DF, STGD5H60DF

STGF5H60DF, STGP5H60DF

Datasheet

Trench gate field-stop 600 V, 5 A high speed H series IGBT

Features

TAB

•

High-speed switching

DPAK

Tight parameter distribution

Safe paralleling

D²PAK

TAB

Low thermal resistance

Short-circuit rated

Ultrafast soft recovery antiparallel diode

TO-220

TO-220FP

Applications

C(2, TAB)

•

Motor control

UPS

PFC

G(1)

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-

stop structure. These devices are part of the H series of IGBTs, which represents an

optimum compromise between conduction and switching losses to maximize the

efficiency of high switching frequency converters. Furthermore, a slightly positive

V_CE(sat)temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

E(3)

NG1E3C2T

Product status link

STGB5H60DF

STGD5H60DF

STGF5H60DF

STGP5H60DF

DS10745 - Rev 5 - March 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...31

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