Datasheet > STGST200G65DFAG

STGST200G65DFAG

更新时间： 2024-09-28 14:58:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
15页	745K
描述
Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package

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STGST200G65DFAG 数据手册

STGST200G65DFAG

Datasheet

Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package

Features

•

AEC-Q101 qualified

V_CE(sat)= 1.52 V (typ.) @ I_C= 200 A

Positive V_CE(sat)temperature coefficient

Tight parameter distribution

STPAK

Low thermal resistance

Very fast and soft recovery antiparallel diode

C(4)

Applications

•

Main inverter (electric traction)

G(3)

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. This device represents an optimum compromise in performance to

maximize the efficiency of inverter systems where low-loss are essential.

Furthermore, a positive V_CE(sat)temperature coefficient and tight parameter

distribution result in safer paralleling operation.

E(1, 2)

NG3C4E12

Product status link

STGST200G65DFAG

Product summary

Order code

Marking

STGST200G65DFAG

G200G65DFAG

STPAK

Package

Packing

Tray

DS13887 - Rev 2 - November 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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