Datasheet > STGW20H65FB

STGW20H65FB

更新时间： 2023-12-20 18:44:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
19页	451K
描述
650 V、20 A高速沟槽栅场截止HB系列IGBT

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STGW20H65FB 数据手册

STGFW20H65FB, STGW20H65FB,

STGWT20H65FB

Datasheet

Trench gate field-stop 650 V, 20 A high speed HB series IGBT

Features

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

TO-3PF

V_CE(sat)= 1.55 V (typ.) @ I_C= 20 A

Tight parameters distribution

Safe paralleling

TAB

Low thermal resistance

TO-247

TO-3P

C(2, TAB)

Applications

•

Photovoltaic inverters

Power factor correction

Welding

G(1)

High-frequency converters

Description

E(3)

G1C2TE3

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents

an optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive V_CE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

Product status links

STGFW20H65FB

STGW20H65FB

STGWT20H65FB

DS10546 - Rev 3 - March 2021

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...19

中文翻译

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