Datasheet > STGW30H60DFB

STGW30H60DFB

更新时间： 2023-12-20 18:44:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
21页	698K
描述
600 V、30 A高速沟槽栅场截止HB系列IGBT

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STGW30H60DFB 数据手册

STGW30H60DFB, STGWA30H60DFB,

STGWT30H60DFB

Datasheet

Trench gate field-stop 600 V, 30 A high speed HB series IGBT

Features

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

TO-247

TO-247 long leads

Low saturation voltage: V_CE(sat)= 1.55 V (typ.) @ I_C= 30 A

Tight parameter distribution

TAB

Safe paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

TO-3P

Very fast soft recovery antiparallel diode

Applications

•

Photovoltaic inverters

High frequency converters

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-

stop structure. These devices are part of the new HB series of IGBTs, which

represent an optimum compromise between conduction and switching loss to

maximize the efficiency of any frequency converter. Furthermore, the slightly positive

V_CE(sat)temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Product status link

STGW30H60DFB

STGWA30H60DFB

STGWT30H60DFB

DS10467 - Rev 4 - May 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...21

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