STGW30N90D

更新时间： 2024-09-28 02:52:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
10页	160K
描述
N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

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中文翻译

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数据手册

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STGW30N90D 数据手册

STGW30N90D

N-channel 900V - 30A - TO-247

Very fast PowerMESH™ IGBT

Preliminary Data

Features

I_C

V_CE(sat)

@25°C

Type

V_CES

@100°C

STGW30N90D

■ Low on-losses

900V

< 2.75V

30A

■ Low on-voltage drop (V

■ High current capability

)

cesat

TO-247

■ High input impedance (voltage driven)

■ Low gate charge

■ Ideal for soft switching application

Description

Figure 1.

Internal schematic diagram

Using the latest high voltage technology based on

its patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, with

outstanding performances.

Application

■ Induction heating

Table 1.

Order code

STGW30N90D

Device summary

Marking

Package

TO-247

Packaging

GW30N90D

Tube

July 2007

Rev 1

1/10

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...10

中文翻译

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