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STGW35NC60W PDF预览

STGW35NC60W

更新时间: 2024-11-25 20:10:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网双极性晶体管功率控制
页数 文件大小 规格书
13页 490K
描述
70A, 600V, N-CHANNEL IGBT, TO-247, ROHS COMPLIANT PACKAGE-3

STGW35NC60W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247
包装说明:ROHS COMPLIANT PACKAGE-3针数:3
Reach Compliance Code:compliant风险等级:5.73
最大集电极电流 (IC):70 A集电极-发射极最大电压:600 V
配置:SINGLE门极发射器阈值电压最大值:5.75 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):260 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):197 ns标称接通时间 (ton):42.5 ns
Base Number Matches:1

STGW35NC60W 数据手册

 浏览型号STGW35NC60W的Datasheet PDF文件第2页浏览型号STGW35NC60W的Datasheet PDF文件第3页浏览型号STGW35NC60W的Datasheet PDF文件第4页浏览型号STGW35NC60W的Datasheet PDF文件第5页浏览型号STGW35NC60W的Datasheet PDF文件第6页浏览型号STGW35NC60W的Datasheet PDF文件第7页 
STGW35NC60W  
40 A, 600 V ultra fast IGBT  
Features  
High frequency operation  
Lower C  
/ C  
ratio (no cross-conduction  
IES  
RES  
susceptibility)  
Applications  
3
High frequency motor controls, inverters, UPS  
2
1
HF, SMPS and PFC in both hard switch and  
resonant topologies  
TO-247 long leads  
Description  
This IGBT utilizes the advanced PowerMESH™  
process resulting in an excellent trade-off  
between switching performance and low on-state  
behavior.  
Figure 1.  
Internal schematic diagram  
Table 1.  
Order code  
STGW35NC60W  
Device summary  
Marking  
Package  
TO-247 long leads  
Packaging  
GW35NC60W  
Tube  
November 2008  
Rev 1  
1/13  
www.st.com  
13  

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