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STGW35NB60S PDF预览

STGW35NB60S

更新时间: 2024-01-27 15:07:22
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网双极性晶体管功率控制
页数 文件大小 规格书
13页 260K
描述
70A, 600V, N-CHANNEL IGBT, TO-247, ROHS COMPLIANT PACKAGE-3

STGW35NB60S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247包装说明:ROHS COMPLIANT PACKAGE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
外壳连接:ISOLATED最大集电极电流 (IC):70 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):3600 ns
标称接通时间 (ton):153 nsBase Number Matches:1

STGW35NB60S 数据手册

 浏览型号STGW35NB60S的Datasheet PDF文件第2页浏览型号STGW35NB60S的Datasheet PDF文件第3页浏览型号STGW35NB60S的Datasheet PDF文件第4页浏览型号STGW35NB60S的Datasheet PDF文件第5页浏览型号STGW35NB60S的Datasheet PDF文件第6页浏览型号STGW35NB60S的Datasheet PDF文件第7页 
STGW35NB60S  
N-channel 35A - 600V - TO-247  
Low drop PowerMESH™ IGBT  
Features  
VCE(sat)  
(Max)@ 25°C @100°C  
IC  
Type  
VCES  
STGW35NB60S  
600V  
< 1.7V 35A  
Low on-voltage drop (V  
Low input capacitance  
High current capability  
)
CEsat  
TO-247  
Description  
Internal schematic iagram  
Using the latest high voltage technology based on  
a patented strip layout, STMicroelectronics has  
designed an advanced family of IGBTs, the  
PowerMESH  
IGBTs,  
with  
outstanding  
performances.  
Applications  
Light dimmer  
HID  
Welding  
Motor control  
Static relays  
Order code  
Part number  
Marking  
Package  
Packaging  
STGW35NB60S  
GW35NB60S  
TO-247  
Tube  
March 2007  
Rev 1  
1/13  
www.st.com  
13  

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