Datasheet > STGW30NC120HD_07

STGW30NC120HD_07

更新时间： 2024-02-13 08:41:32

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
13页	296K
描述
N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT

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中文翻译

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数据手册

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STGW30NC120HD_07 数据手册

STGW30NC120HD

N-channel 1200V - 30A - TO-247

Very fast PowerMESH™ IGBT

General features

I_C

V_CE(sat)

@25°C

Type

V_CES

@100°C

STGW30NC120HD 1200V

< 2.75V

30A

■ Low on-losses

■ Low on-voltage drop (V

)

cesat

■ High current capability

TO-247

■ High input impedance (voltage driven)

■ Low gate charge

■ Ideal for soft switching application

Description

Internal schematic diagram

Using the latest high voltage technology based on

its patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, with

outstanding performances. The suffix “H”

identifies a family optimized for high frequency

application in order to achieve very high switching

performances (reduced tfall) maintaining a low

voltage drop.

Applications

■ Induction heating

Order codes

Part number

Marking

Package

Packaging

STGW30NC120HD

GW30NC120HD

TO-247

Tube

January 2007

Rev 8

1/13

www.st.com

12 3 4 5 6 7...13

中文翻译

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