Datasheet > 晶体管 > IGBT> STGW20NB60K

STGW20NB60K

更新时间： 2024-09-27 22:19:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
8页	281K
描述
N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH⑩ IGBT

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STGW20NB60K 数据手册

STGW20NB60K

N-CHANNEL 20A - 600V - TO-247

SHORT CIRCUIT PROOF PowerMESH™ IGBT

TYPE

CES

CE(sat)

STGW20NB60K

600 V

< 2.8 V

20 A

■

HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

LOW ON-VOLTAGE DROP (V

LOW ON-LOSSES

)

cesat

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

OFF LOSSES INCLUDE TAIL CURRENT

VERY HIGH FREQUENCY OPERATION

SHORT CIRCUIT RATED

TO-247

LATCH CURRENT FREE OPERATION

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

™

PowerMESH IGBTs, with outstanding

performances. The suffix “K” identifies a family

optimized for high frequency motor control

applications with short circuit withstand capability.

APPLICATIONS

■

HIGH FREQUENCY MOTOR CONTROLS

U.P.S.

WELDING EQUIPMENTS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage (V = 0)

600

CES

Emitter-Collector Voltage

Gate-Emitter Voltage

ECR

±20

Collector Current (continuos) at T = 25°C

Collector Current (continuos) at T = 100°C

( )

Collector Current (pulsed)

Short Circuit Withstand

Tsc

µs

Total Dissipation at T = 25°C

150

TOT

Derating Factor

W/°C

°C

stg

Storage Temperature

–65 to 150

150

Max. Operating Junction Temperature

May 2003

1/8

12 3 4 5 6 7 8

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