Datasheet > STGW30H60DF

STGW30H60DF

更新时间： 2024-09-28 20:04:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
24页	1943K
描述
600 V, 30 A high speed trench gate field-stop IGBT

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中文翻译

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技术参数
数据手册

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STGW30H60DF 技术参数

生命周期：	Not Recommended	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	8.31
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STGW30H60DF 数据手册

STGB30H60DF, STGF30H60DF,

STGP30H60DF, STGW30H60DF

600 V, 30 A high speed

trench gate field-stop IGBT

Datasheet

production data

Features

TAB

• High speed switching

• Tight parameters distribution

• Safe paralleling

D²PAK

• Low thermal resistance

• Short circuit rated

TO-220FP

TAB

• Ultrafast soft recovery antiparallel diode

Applications

• Inverter

• UPS

TO-220

TO-247

• PFC

Figure 1. Internal schematic diagram

Description

C (2, TAB)

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT series offers the optimum

compromise between conduction and switching

losses, maximizing the efficiency of very high

frequency converters. Furthermore, a positive

G (1)

V_CE(sat)temperature coefficient and very tight

parameter distribution result in easier paralleling

operation.

E (3)

Table 1. Device summary

Order codes

Marking

Package

Packaging

STGB30H60DF

STGF30H60DF

STGP30H60DF

STGW30H60DF

GB30H60DF

GF30H60DF

GP30H60DF

GW30H60DF

D²PAK

TO-220FP

TO-220

Tape and reel

Tube

TO-247

March 2013

DocID022363 Rev 3

1/24

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...24

中文翻译

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